收藏本站
NDD04N50Z
PACKAGE DIMENSIONS
IPAK
CASE 369D ? 01
ISSUE B
V
B
R
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
1
4
2
3
A
Z
DIM
A
B
C
D
INCHES
MIN MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
? T ?
SEATING
PLANE
F
G
K
J
D 3 PL
0.13 (0.005)
M
T
H
E 0.018 0.023
F 0.037 0.045
G 0.090 BSC
H 0.034 0.040
J 0.018 0.023
K 0.350 0.380
R 0.180 0.215
S 0.025 0.040
V 0.035 0.050
Z 0.155 ???
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
0.46 0.58
0.94 1.14
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.45
0.63 1.01
0.89 1.27
3.93 ???
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT :
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 Toll Free USA/Canada
Fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 Toll Free USA/Canada
Email : orderlit@onsemi.com
N. American Technical Support : 800 ? 282 ? 9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81 ? 3 ? 5773 ? 3850
http://onsemi.com
8
ON Semiconductor Website : www.onsemi.com
Order Literature : http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NDD04N50Z/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NDD05N50ZT4G MOSFET N-CH 500V 5A DPAK
NDF02N60ZH MOSFET N CH 600V 2.4A TO220FP
NDF03N60ZH MOSFET N CH 600V 4.8A TO220FP
NDF04N60ZH MOSFET N CH 600V 4.8A TO220FP
NDF04N62ZG MOSFET N-CH 620V 2OHM TO220FP
NDF05N50ZH MOSFET N-CH 500V 4.4A TO-220FP
NDF06N60ZG MOSFET N-CH 600V 7.1A TO-220FP
NDF06N60ZH MOSFET N CH 600V 7.1A TO220FP
相关代理商/技术参数
NDD04N50ZT4G 功能描述:MOSFET 500V 3A HV MOSFET DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDD04N60Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 1.8 , 600 Volts
NDD04N60Z-1G 功能描述:MOSFET NFET IPAK 600V 4A 1.8R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDD04N60ZG 制造商:ON Semiconductor 功能描述:NDD Series 600 V 1.8 Ohm 83 W Surface Mount N-Channel Power MOSFET - TO-252-3
NDD04N60ZT4G 功能描述:MOSFET NFET DPAK 600V 4A 1.8R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDD04N62Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 1.8 
NDD04N62Z-1G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 1.8 
NDD04N62ZT4G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 1.8